The limiting module produced by Suzhou More GaN Semiconductor Technology Co., Ltd. has the characteristics of small size, high reliability, low insertion loss, and high input power tolerance. It can provide a variety of packaging forms, and the product form adopts two schemes of GaN & Si-based hybrid integration and all-GaN. The semi-active scheme in the DC-12G frequency band can achieve kilowatt-level limiting, and the full-GaN MMIC has a response time and recovery time of sub-nanoseconds.